ZXMD63N03XTC【PDF 4/8 页】MOSFET DUAL N-CHAN 30V 8MSOP

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ZXMD63N03X

Electrical Characteristics (@T A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current T J = +25°C

Gate-Source Leakage

BV DSS

I DSS

I GSS

30

—

—

—

—

—

—

1.0

100

V

μA

nA

V GS = 0V, I D = 250 μ A

V DS = 30V, V GS = 0V

V GS = ±20V, V DS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 11)

Forward Transconductance (Notes 11 & 13)

Diodes Forward Voltage (Note 11)

V GS(th)

R DS (ON)

g fs

V SD

1.0

—

1.9

—

—

—

—

—

—

—

135

200

—

0.95

V

m ?

S

V

V DS = V GS , I D = 250 μ A

V GS = 10V, I D = 1.7A

V GS = 4.5V, I D = 0.85A

V DS = 10V, I D = 0.85A

T J = 25°C, I S = 1.7A, V GS = 0V

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 12 & 13)

Output Capacitance (Notes 12 & 13)

Reverse Transfer Capacitance (Notes 12 & 13)

Total Gate Charge (Notes 12 & 13)

Gate-Source Charge (Notes 12 & 13)

Gate-Drain Charge (Notes 12 & 13)

Reverse Recovery Time (Note 13)

Reverse Recovery Charge (Note 13)

Turn-On Delay Time (Notes 12 & 13)

Turn-On Rise Time (Notes 12 & 13)

Turn-Off Delay Time (Notes 12 & 13)

Turn-Off Fall Time (Notes 12 & 13)

C iss

C oss

C rss

Q g

Q gs

Q gd

t rr

Q rr

t D(on)

t r

t D(off)

t f

—

—

—

—

—

—

—

—

—

—

—

—

290

70

20

—

—

—

16.9

9.5

2.5

4.1

9.6

4.4

—

—

—

8

1.2

2

—

—

—

—

—

—

pF

nC

ns

nC

ns

V DS = 25V, V GS = 0V,

f = 1.0MHz

V GS = 10V, V DS = 24V,

I D = 1.7A

T J = +25°C, I F = 1.7A,

di/dt = 100A/μs

V DD = 15V, I D = 1.7A,

R G = 6.1 ? , R D = 8.7 ? ,

Notes:

11. Measured under pulsed conditions. Pulse width ? 300 ? s; duty cycle ? 2%.

12. Switching characteristics are independent of operating junction temperature.

13. For design aid only, not subject to production testing.

ZXMD63N03X

Document number: DS33501 Rev. 2 - 2

4 of 8

www.diodes.com

March 2014

? Diodes Incorporated

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